- RS Stock No.:
- 168-7770
- Mfr. Part No.:
- TK100E10N1
- Brand:
- Toshiba
900 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Tube of 50)
$3.771
(exc. GST)
$4.148
(inc. GST)
Units | Per unit | Per Tube* |
50 - 200 | $3.771 | $188.55 |
250 + | $3.394 | $169.70 |
*price indicative |
- RS Stock No.:
- 168-7770
- Mfr. Part No.:
- TK100E10N1
- Brand:
- Toshiba
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Toshiba
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 207 A |
Maximum Drain Source Voltage | 100 V |
Series | TK |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 3.4 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Maximum Power Dissipation | 255 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 10.16mm |
Number of Elements per Chip | 1 |
Width | 4.45mm |
Typical Gate Charge @ Vgs | 140 nC @ 10 V |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Height | 15.1mm |