- RS Stock No.:
- 168-5946
- Mfr. Part No.:
- IRF100B202
- Brand:
- Infineon
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price (ex. GST) Each (In a Tube of 50)
$1.601
(exc. GST)
$1.761
(inc. GST)
Units | Per unit | Per Tube* |
50 - 200 | $1.601 | $80.05 |
250 + | $1.441 | $72.05 |
*price indicative |
- RS Stock No.:
- 168-5946
- Mfr. Part No.:
- IRF100B202
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 97 A |
Maximum Drain Source Voltage | 100 V |
Series | HEXFET |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 8.6 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 221 W |
Maximum Gate Source Voltage | -20 V, +20 V |
Typical Gate Charge @ Vgs | 77 nC @ 10 V |
Length | 10.67mm |
Width | 4.83mm |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +175 °C |
Forward Diode Voltage | 1.3V |
Minimum Operating Temperature | -55 °C |
Height | 16.51mm |
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