NDS9945 Dual N-Channel MOSFET, 3.5 A, 60 V, 8-Pin SOIC ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 3.5 A
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 300 mΩ
Minimum Gate Threshold Voltage 1V
Maximum Gate Source Voltage -20 V, +20 V
Package Type SOIC
Mounting Type Surface Mount
Transistor Configuration Isolated
Pin Count 8
Channel Mode Enhancement
Maximum Power Dissipation 2 W
Typical Gate Charge @ Vgs 12.9 nC @ 10 V
Height 1.57mm
Maximum Operating Temperature +150 °C
Length 4.9mm
Forward Diode Voltage 1.2V
Minimum Operating Temperature -55 °C
Number of Elements per Chip 2
Width 3.9mm
Transistor Material Si
On back order for despatch 17/12/2019, delivery within 5 working days from despatch date.
Price (ex. GST) Each (On a Reel of 2500)
$ 0.842
(exc. GST)
$ 0.926
(inc. GST)
units
Per unit
Per Reel*
2500 +
$0.842
$2,105.00
*price indicative
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