N-Channel MOSFET, 16 A, 60 V, 3-Pin DPAK onsemi RFD16N06LESM9A

RS Stock No.:: 166-3194
Mfr. Part No.:: RFD16N06LESM9A
Brand:: onsemi

N-Channel MOSFET, 16 A, 60 V, 3-Pin DPAK onsemi RFD16N06LESM9A

This image is representative of the product range

On back order for despatch 09/07/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (On a Reel of 2500)

$1.33

(exc. GST)

$1.46

(inc. GST)

Units	Per unit	Per Reel*
2500 - 2500	$1.33	$3,325.00
5000 - 7500	$1.297	$3,242.50
10000 +	$1.277	$3,192.50
*price indicative

RS Stock No.:: 166-3194
Mfr. Part No.:: RFD16N06LESM9A
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	16 A
Maximum Drain Source Voltage	60 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	47 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	90 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +10 V
Length	6.73mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	6.22mm
Typical Gate Charge @ Vgs	51 nC @ 10 V
Height	2.39mm
Minimum Operating Temperature	-55 °C