Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	6.5 A
	Maximum Drain Source Voltage	100 V
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	28 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	135 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	5.59mm
	Typical Gate Charge @ Vgs	24 nC @ 10 V
	Length	6.73mm
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Series	UltraFET
	Minimum Operating Temperature	-55 °C
	Height	2.39mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 6.5 A
	Maximum Drain Source Voltage 100 V
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 28 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 135 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 5.59mm
	Typical Gate Charge @ Vgs 24 nC @ 10 V
	Length 6.73mm
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Series UltraFET
	Minimum Operating Temperature -55 °C
	Height 2.39mm

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

N-Channel MOSFET, 6.5 A, 100 V, 3-Pin DPAK onsemi FDD3672

UltraFET® MOSFET, Fairchild Semiconductor