N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220F onsemi FQPF3N80C

RS Stock No.:: 166-1890
Mfr. Part No.:: FQPF3N80C
Brand:: onsemi

N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220F onsemi FQPF3N80C

This image is representative of the product range

500 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each (In a Tube of 50)

$2.183

(exc. GST)

$2.401

(inc. GST)

Units	Per unit	Per Tube*
50 - 200	$2.183	$109.15
250 +	$1.964	$98.20
*price indicative

RS Stock No.:: 166-1890
Mfr. Part No.:: FQPF3N80C
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3 A
Maximum Drain Source Voltage	800 V
Series	QFET
Package Type	TO-220F
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	4.8 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	39 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	4.7mm
Length	10.16mm
Transistor Material	Si
Typical Gate Charge @ Vgs	13 nC @ 10 V
Height	9.19mm
Minimum Operating Temperature	-55 °C