MPN

N-Channel MOSFET, 850 mA, 100 V, 3-Pin SOT-23 Nexperia BSH114,215

RS Stock No.:: 166-1394
Mfr. Part No.:: BSH114,215
Brand:: Nexperia

N-Channel MOSFET, 850 mA, 100 V, 3-Pin SOT-23 Nexperia BSH114,215

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RS Stock No.:: 166-1394
Mfr. Part No.:: BSH114,215
Brand:: Nexperia

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Nexperia
	Channel Type	N
	Maximum Continuous Drain Current	850 mA
	Maximum Drain Source Voltage	100 V
	Package Type	SOT-23 (TO-236AB)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	500 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	830 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Length	3mm
	Width	1.4mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	4.6 nC @ 10 V
	Height	1mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Nexperia
	Channel Type N
	Maximum Continuous Drain Current 850 mA
	Maximum Drain Source Voltage 100 V
	Package Type SOT-23 (TO-236AB)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 500 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 830 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Length 3mm
	Width 1.4mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 4.6 nC @ 10 V
	Height 1mm
	Minimum Operating Temperature -55 °C

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors