Dual P-Channel MOSFET, 2.3 A, 20 V, 8-Pin SOIC Infineon IRF7104PBF

RS Stock No.:: 166-1112
Mfr. Part No.:: IRF7104PBF
Brand:: Infineon

Dual P-Channel MOSFET, 2.3 A, 20 V, 8-Pin SOIC Infineon IRF7104PBF

This image is representative of the product range

440 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Tube of 95)

$1.193

(exc. GST)

$1.312

(inc. GST)

Units	Per unit	Per Tube*
95 - 380	$1.193	$113.335
475 +	$1.074	$102.03

*price indicative

RS Stock No.:: 166-1112
Mfr. Part No.:: IRF7104PBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

P-Channel Power MOSFET 12V to 20V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	2.3 A
Maximum Drain Source Voltage	20 V
Package Type	SOIC
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	400 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Typical Gate Charge @ Vgs	9.3 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	5mm
Width	4mm
Number of Elements per Chip	2
Height	1.5mm
Minimum Operating Temperature	-55 °C