P-Channel MOSFET, 6 A, 8 V, 3-Pin SOT-23 Vishay SI2329DS-T1-GE3
- RS Stock No.:
- 165-6906
- Mfr. Part No.:
- SI2329DS-T1-GE3
- Brand:
- Vishay
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- RS Stock No.:
- 165-6906
- Mfr. Part No.:
- SI2329DS-T1-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 8 V | |
| Package Type | SOT-23 (TO-236) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 120 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.35V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -5 V, +5 V | |
| Typical Gate Charge @ Vgs | 19.3 nC @ 4.5 V | |
| Length | 3.04mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 8 V | ||
Package Type SOT-23 (TO-236) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 120 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.35V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -5 V, +5 V | ||
Typical Gate Charge @ Vgs 19.3 nC @ 4.5 V | ||
Length 3.04mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
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MOSFET Transistors, Vishay Semiconductor