N-Channel MOSFET, 120 A, 40 V, 3-Pin TO-220AB Infineon IRFB7446PBF

RS Stock No.:: 165-6717
Mfr. Part No.:: IRFB7446PBF
Brand:: Infineon

N-Channel MOSFET, 120 A, 40 V, 3-Pin TO-220AB Infineon IRFB7446PBF

This image is representative of the product range

On back order for despatch 05/05/2025, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Tube of 50)

$1.31

(exc. GST)

$1.44

(inc. GST)

Units	Per unit	Per Tube*
50 - 200	$1.31	$65.50
250 +	$1.179	$58.95
*price indicative

RS Stock No.:: 165-6717
Mfr. Part No.:: IRFB7446PBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MX

Product Details

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low R_DS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	40 V
Package Type	TO-220AB
Series	StrongIRFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3.3 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.2V
Maximum Power Dissipation	99 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	4.83mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	10.67mm
Typical Gate Charge @ Vgs	93 nC @ 10 V
Height	16.51mm
Minimum Operating Temperature	-55 °C