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Dual N-Channel MOSFET, 24 A, 20 V, 8-Pin PowerPAK 1212 Vishay SI7232DN-T1-GE3

RS Stock No.:: 165-6218
Mfr. Part No.:: SI7232DN-T1-GE3
Brand:: Vishay

Dual N-Channel MOSFET, 24 A, 20 V, 8-Pin PowerPAK 1212 Vishay SI7232DN-T1-GE3

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RS Stock No.:: 165-6218
Mfr. Part No.:: SI7232DN-T1-GE3
Brand:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Maximum Continuous Drain Current	24 A
	Maximum Drain Source Voltage	20 V
	Package Type	PowerPAK 1212
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	24 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.4V
	Maximum Power Dissipation	23 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-8 V, +8 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	2
	Width	3.15mm
	Typical Gate Charge @ Vgs	21 nC @ 8 V
	Transistor Material	Si
	Length	3.15mm
	Minimum Operating Temperature	-55 °C
	Height	1.07mm

	Select all
	Brand Vishay
	Channel Type N
	Maximum Continuous Drain Current 24 A
	Maximum Drain Source Voltage 20 V
	Package Type PowerPAK 1212
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 24 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.4V
	Maximum Power Dissipation 23 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -8 V, +8 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 2
	Width 3.15mm
	Typical Gate Charge @ Vgs 21 nC @ 8 V
	Transistor Material Si
	Length 3.15mm
	Minimum Operating Temperature -55 °C
	Height 1.07mm

COO (Country of Origin):: CN

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