N-Channel MOSFET, 100 A, 55 V, 3-Pin D2PAK Infineon IPB100N06S2L05ATMA1

RS Stock No.:: 165-5663
Mfr. Part No.:: IPB100N06S2L05ATMA1
Brand:: Infineon

N-Channel MOSFET, 100 A, 55 V, 3-Pin D2PAK Infineon IPB100N06S2L05ATMA1

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Discontinued product

RS Stock No.:: 165-5663
Mfr. Part No.:: IPB100N06S2L05ATMA1
Brand:: Infineon

IPB100N06S2L-05, IPP100N06S2L-05, OptiMOS Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	100 A
Maximum Drain Source Voltage	55 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	5.9 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	170 nC @ 10 V
Length	10.31mm
Width	9.45mm
Height	4.57mm
Series	OptiMOS
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 100 A, 55 V, 3-Pin D2PAK Infineon IPB100N06S2L05ATMA1

Infineon OptiMOS™ Power MOSFET Family

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