CAS120M12BM2 Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Wolfspeed

  • RS Stock No. 162-9720
  • Mfr. Part No. CAS120M12BM2
  • Manufacturer Wolfspeed
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements

MOSFET Transistors, Wolfspeed

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 193 A
Maximum Drain Source Voltage 1200 V
Maximum Drain Source Resistance 30 mΩ
Maximum Gate Threshold Voltage 2.6V
Minimum Gate Threshold Voltage 1.8V
Maximum Gate Source Voltage -10 V, +25 V
Package Type Half Bridge
Mounting Type Panel Mount
Transistor Configuration Series
Pin Count 7
Channel Mode Enhancement
Maximum Power Dissipation 925 W
Length 106.4mm
Forward Diode Voltage 2.4V
Transistor Material SiC
Width 61.4mm
Number of Elements per Chip 2
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +150 °C
Height 30mm
Typical Gate Charge @ Vgs 378 nC @ 20 V
20 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Box of 10)
$ 1,012.221
(exc. GST)
$ 1,113.443
(inc. GST)
units
Per unit
Per Box*
10 +
$1,012.221
$10,122.21
*price indicative
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