N-Channel MOSFET, 100 A, 30 V, 4-Pin LFPAK, SOT-669 Nexperia PSMN3R5-30YL,115
- RS Stock No.:
- 153-2878
- Mfr. Part No.:
- PSMN3R5-30YL,115
- Brand:
- Nexperia
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Price (ex. GST) Each (In a Pack of 25)
$1.416
(exc. GST)
$1.558
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 25 + | $1.416 | $35.40 |
*price indicative
- RS Stock No.:
- 153-2878
- Mfr. Part No.:
- PSMN3R5-30YL,115
- Brand:
- Nexperia
Technical data sheets
Legislation and Compliance
Product Details
N-channel MOSFETs 25 V - 30 V, Robust performance thanks to advanced technology know-how, Easy-to-use MOSFETs in the 25 V to 30 V range. Perfect for space- and power-critical applications, they offer excellent switching performance and class-leading safe operating area (SOA). Need a different voltage rating? Check out the rest of our huge portfolio for more options.
N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK, Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.
High efficiency due to low switching and conduction losses
Suitable for logic level gate drive sources
Class-D amplifiers
DC-to-DC converters
Motor control
Server power supplies
Suitable for logic level gate drive sources
Class-D amplifiers
DC-to-DC converters
Motor control
Server power supplies
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | LFPAK, SOT-669 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 6 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.45V |
| Minimum Gate Threshold Voltage | 0.65V |
| Maximum Power Dissipation | 74 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Width | 4.1mm |
| Length | 5mm |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.05mm |
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