Nexperia 3 P-Channel MOSFET, -4.9 A, -12 V, 2-Pin WLCSP PMCM4401VPEZ

RS Stock No.:: 153-0772P
Mfr. Part No.:: PMCM4401VPEZ
Brand:: Nexperia

Nexperia 3 P-Channel MOSFET, -4.9 A, -12 V, 2-Pin WLCSP PMCM4401VPEZ

Bulk discount available

Subtotal 250 units (supplied on a reel)*

$104.00

(exc. GST)

$114.50

(inc. GST)

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Units	Per unit
250 - 1225	$0.416
1250 - 2475	$0.358
2500 - 6225	$0.336
6250 +	$0.315

*price indicative

RS Stock No.:: 153-0772P
Mfr. Part No.:: PMCM4401VPEZ
Brand:: Nexperia

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Channel Type	P
	Maximum Continuous Drain Current	-4.9 A
	Maximum Drain Source Voltage	-12 V
	Package Type	WLCSP
	Mounting Type	Surface Mount
	Pin Count	2
	Maximum Drain Source Resistance	160 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	-0.9V
	Minimum Gate Threshold Voltage	-0.4V
	Maximum Power Dissipation	12500 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	8 V
	Width	0.75mm
	Number of Elements per Chip	3
	Typical Gate Charge @ Vgs	6.8 nC @ 10 V
	Length	0.75mm
	Maximum Operating Temperature	+150 °C
	Height	0.315mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Nexperia
	Channel Type P
	Maximum Continuous Drain Current -4.9 A
	Maximum Drain Source Voltage -12 V
	Package Type WLCSP
	Mounting Type Surface Mount
	Pin Count 2
	Maximum Drain Source Resistance 160 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage -0.9V
	Minimum Gate Threshold Voltage -0.4V
	Maximum Power Dissipation 12500 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage 8 V
	Width 0.75mm
	Number of Elements per Chip 3
	Typical Gate Charge @ Vgs 6.8 nC @ 10 V
	Length 0.75mm
	Maximum Operating Temperature +150 °C
	Height 0.315mm
	Minimum Operating Temperature -55 °C

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

12 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Low threshold voltage
Ultra small package: 0.78 x 0.78 x 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Battery switch
High-speed line driver
Low-side loadswitch
Switching circuits