Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Nexperia
	Channel Type	P
	Maximum Continuous Drain Current	-4.1 A
	Maximum Drain Source Voltage	-20 V
	Package Type	SC-74, SOT457
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	129 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	-1.25V
	Minimum Gate Threshold Voltage	-0.75V
	Maximum Power Dissipation	6250 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	12 V
	Length	3.1mm
	Width	1.7mm
	Number of Elements per Chip	3
	Typical Gate Charge @ Vgs	5.2 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Automotive Standard	AEC-Q101
	Height	1mm

	Select all
	Brand Nexperia
	Channel Type P
	Maximum Continuous Drain Current -4.1 A
	Maximum Drain Source Voltage -20 V
	Package Type SC-74, SOT457
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 129 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage -1.25V
	Minimum Gate Threshold Voltage -0.75V
	Maximum Power Dissipation 6250 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage 12 V
	Length 3.1mm
	Width 1.7mm
	Number of Elements per Chip 3
	Typical Gate Charge @ Vgs 5.2 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Automotive Standard AEC-Q101
	Height 1mm

20 V, single P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low threshold voltage
Fast switching
Trench MOSFET technology
2 kV ESD protection
AEC-Q101 qualified
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits

Nexperia 3 P-Channel MOSFET, -4.1 A, -20 V, 6-Pin SC-74, SOT457 PMN70XPEAX