- RS Stock No.:
- 151-3378
- Mfr. Part No.:
- PSMN8R5-60YS,115
- Brand:
- Nexperia
On back order for despatch 07/10/2024, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each (On a Reel of 1500)
$1.133
(exc. GST)
$1.246
(inc. GST)
Units | Per unit | Per Reel* |
1500 - 1500 | $1.133 | $1,699.50 |
3000 - 4500 | $1.117 | $1,675.50 |
6000 + | $1.088 | $1,632.00 |
*price indicative |
- RS Stock No.:
- 151-3378
- Mfr. Part No.:
- PSMN8R5-60YS,115
- Brand:
- Nexperia
Technical data sheets
Legislation and Compliance
Product Details
N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET, Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Advanced TrenchMOS provides low RDSon and low gate charge
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
High efficiency gains in switching power converters
Improved mechanical and thermal characteristics
LFPAK provides maximum power density in a Power SO8 package
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 76 A |
Maximum Drain Source Voltage | 60 V |
Package Type | LFPAK, SOT-669 |
Mounting Type | Surface Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 18.4 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.8V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 106 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 20 V |
Width | 4.1mm |
Typical Gate Charge @ Vgs | 39 nC @ 10 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +175 °C |
Length | 5mm |
Height | 1.05mm |
Minimum Operating Temperature | -55 °C |