IXYS X2-Class N-Channel MOSFET, 2 A, 650 V, 3-Pin DPAK IXTY2N65X2

This image is representative of the product range

View all MOSFETs
Unavailable
RS will no longer stock this product.
RS Stock No.:
146-1790
Mfr. Part No.:
IXTY2N65X2
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Series

X2-Class

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

7.12mm

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

4.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS