- RS Stock No.:
- 145-7049
- Mfr. Part No.:
- C3M0120090D
- Brand:
- Wolfspeed
60 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Tube of 30)
$13.939
(exc. GST)
$15.333
(inc. GST)
Units | Per unit | Per Tube* |
30 - 30 | $13.939 | $418.17 |
60 - 90 | $13.591 | $407.73 |
120 + | $13.382 | $401.46 |
*price indicative |
- RS Stock No.:
- 145-7049
- Mfr. Part No.:
- C3M0120090D
- Brand:
- Wolfspeed
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 23 A |
Maximum Drain Source Voltage | 900 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 155 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 1.8V |
Maximum Power Dissipation | 97 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -8 V, +18 V |
Typical Gate Charge @ Vgs | 17.3 nC @ 15 V |
Length | 16.13mm |
Number of Elements per Chip | 1 |
Width | 21.1mm |
Maximum Operating Temperature | +150 °C |
Transistor Material | SiC |
Minimum Operating Temperature | -55 °C |
Height | 5.21mm |
Forward Diode Voltage | 4.8V |
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