Dual N-Channel MOSFET, 30 A, 40 V, 8-Pin SO Vishay SQJB42EP-T1_GE3

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Packaging Options:
RS Stock No.:
134-9711
Mfr. Part No.:
SQJB42EP-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Package Type

SO

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

48 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.26mm

Maximum Operating Temperature

+175 °C

Length

6.25mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Height

1.12mm

Automotive Standard

AEC-Q101

Series

TrenchFET

Forward Diode Voltage

1.2V

Dual N-Channel MOSFET, TrenchFET® Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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