Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N, P
	Maximum Continuous Drain Current	2.5 A, 3 A
	Maximum Drain Source Voltage	60 V
	Package Type	SOT-28FL, VEC8
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	116 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.6V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	1 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	2.3mm
	Number of Elements per Chip	2
	Length	2.9mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	10 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Forward Diode Voltage	1.2V
	Height	0.73mm

	Select all
	Brand onsemi
	Channel Type N, P
	Maximum Continuous Drain Current 2.5 A, 3 A
	Maximum Drain Source Voltage 60 V
	Package Type SOT-28FL, VEC8
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 116 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.6V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 1 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Width 2.3mm
	Number of Elements per Chip 2
	Length 2.9mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 10 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Forward Diode Voltage 1.2V
	Height 0.73mm

COO (Country of Origin):: CN

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Dual N/P-Channel MOSFET, ON Semiconductor