N-Channel MOSFET, 48 A, 650 V, 3-Pin TO-247 STMicroelectronics STW56N65DM2
- RS Stock No.:
- 111-6486P
- Mfr. Part No.:
- STW56N65DM2
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 10 units (supplied in a tube)*
$162.90
(exc. GST)
$179.20
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 10 - 29 | $16.29 |
| 30 - 179 | $14.93 |
| 180 - 599 | $13.27 |
| 600 + | $11.70 |
*price indicative
- RS Stock No.:
- 111-6486P
- Mfr. Part No.:
- STW56N65DM2
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 48 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 65 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 360 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Transistor Material | Si | |
| Width | 5.15mm | |
| Typical Gate Charge @ Vgs | 88 nC @ 10 V | |
| Length | 15.75mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.6V | |
| Minimum Operating Temperature | -55 °C | |
| Series | MDmesh DM2 | |
| Height | 20.15mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 48 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 65 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 360 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Transistor Material Si | ||
Width 5.15mm | ||
Typical Gate Charge @ Vgs 88 nC @ 10 V | ||
Length 15.75mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.6V | ||
Minimum Operating Temperature -55 °C | ||
Series MDmesh DM2 | ||
Height 20.15mm | ||
- COO (Country of Origin):
- CN