- RS Stock No.:
- 892-2129
- Mfr. Part No.:
- IKW08T120FKSA1
- Brand:
- Infineon
Available for back order.
Added
Price (ex. GST) Each (In a Pack of 4)
$5.423
(exc. GST)
$5.965
(inc. GST)
Units | Per unit | Per Pack* |
4 - 4 | $5.423 | $21.692 |
8 + | $5.33 | $21.32 |
*price indicative |
Alternative
This product is not currently available. Here is our alternative recommendation.
- RS Stock No.:
- 892-2129
- Mfr. Part No.:
- IKW08T120FKSA1
- Brand:
- Infineon
Legislation and Compliance
Product Details
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 1100 to 1600V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 16 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 70 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 20kHz |
Transistor Configuration | Single |
Dimensions | 16.13 x 5.21 x 21.1mm |
Maximum Operating Temperature | +150 °C |
Gate Capacitance | 600pF |
Energy Rating | 2.28mJ |
Minimum Operating Temperature | -40 °C |
Related links
- SiC N-Channel MOSFET Transistor & Diode 1200 V, 3-Pin TO-247...
- Infineon FF450R12KT4HOSA1 Series IGBT Module 3-Pin 62MM Module, Panel Mount
- Infineon IGW40T120FKSA1 IGBT 3-Pin TO-247, Through Hole
- SiC N-Channel MOSFET 1200 V, 3-Pin TO-247 Wolfspeed C2M0160120D
- Infineon IKQ100N120CH7XKSA1 Common Emitter IGBT 3-Pin TO-247, Through Hole
- Infineon FP150R12N3T7BPSA1 3 Phase IGBT 43-Pin Module, Chassis Mount
- SiC N-Channel MOSFET 1200 V, 3-Pin TO-247 Wolfspeed C2M0040120D
- Infineon IKW40N120CS7XKSA1 Single IGBT 3-Pin TO-247-3, Through Hole