onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 864-8855P
- Mfr. Part No.:
- FGH40T120SMD
- Brand:
- onsemi
Bulk discount available
Subtotal 8 units (supplied in a tube)*
$109.52
(exc. GST)
$120.48
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 7 unit(s) ready to ship from another location
- Plus 450 unit(s) shipping from 01 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 8 - 14 | $13.69 |
| 15 + | $13.50 |
*price indicative
- RS Stock No.:
- 864-8855P
- Mfr. Part No.:
- FGH40T120SMD
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 555 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.87 x 4.82 x 20.82mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 555 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.87 x 4.82 x 20.82mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.