Toshiba GT30J341,Q(O IGBT, 59 A 600 V, 3-Pin TO-3PN

  • RS Stock No. 799-4867
  • Mfr. Part No. GT30J341,Q(O
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 59 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 230 W
Package Type TO-3PN
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.5mm
Width 4.5mm
Height 20mm
Dimensions 15.5 x 4.5 x 20mm
Maximum Operating Temperature +175 °C
116 In stock for delivery within 5 working day(s) (Global Stock)
Price (ex. GST) Each
$ 8.71
(exc. GST)
$ 9.58
(inc. GST)
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