Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Maximum Continuous Collector Current	100 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	535 W
	Package Type	TO-247
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Switching Speed	1MHz
	Transistor Configuration	Single
	Dimensions	16.25 x 5.3 x 21.4mm
	Minimum Operating Temperature	-55 °C
	Maximum Operating Temperature	+175 °C

	Select all
	Brand onsemi
	Maximum Continuous Collector Current 100 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 535 W
	Package Type TO-247
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Switching Speed 1MHz
	Transistor Configuration Single
	Dimensions 16.25 x 5.3 x 21.4mm
	Minimum Operating Temperature -55 °C
	Maximum Operating Temperature +175 °C

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

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IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

IGBT Discretes, ON Semiconductor