IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

RS Stock No.:: 791-7425
Mfr. Part No.:: IXGP20N120B3
Brand:: IXYS

IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole

This image is representative of the product range

22 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 2)

$10.36

(exc. GST)

$11.40

(inc. GST)

Units	Per unit	Per Pack*
2 - 12	$10.36	$20.72
14 - 24	$10.105	$20.21
26 +	$9.945	$19.89
*price indicative

RS Stock No.:: 791-7425
Mfr. Part No.:: IXGP20N120B3
Brand:: IXYS

Technical data sheets

Legislation and Compliance

Product Details

IGBT Discretes, IXYS

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	80 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	180 W
Package Type	TO-220
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	20kHz
Transistor Configuration	Single
Dimensions	10.66 x 4.83 x 16mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C