Infineon IGBT Module 650 V, Through Hole
- RS Stock No.:
- 248-1200P
- Mfr. Part No.:
- F3L100R07W2H3B11BPSA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal 2 units (supplied in a tray)*
$208.14
(exc. GST)
$228.96
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 1 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 2 - 5 | $104.07 |
| 6 - 7 | $98.89 |
| 8 - 11 | $93.93 |
| 12 + | $89.24 |
*price indicative
- RS Stock No.:
- 248-1200P
- Mfr. Part No.:
- F3L100R07W2H3B11BPSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 4 | |
| Maximum Power Dissipation Pd | 20mW | |
| Mount Type | Through Hole | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 42.5 mm | |
| Series | F3L100R07W2H3B11 | |
| Standards/Approvals | RoHS | |
| Height | 12mm | |
| Length | 56.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 4 | ||
Maximum Power Dissipation Pd 20mW | ||
Mount Type Through Hole | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 42.5 mm | ||
Series F3L100R07W2H3B11 | ||
Standards/Approvals RoHS | ||
Height 12mm | ||
Length 56.7mm | ||
Automotive Standard No | ||
The Infineon makes this EasyPACK 2B 650 V, 100 A 3-level IGBT module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC. This device offers easy of use compact design, optimized performance. The device provides added benefits like increased blocking voltage capability up to 650 V, low inductive design, low switching losses and low VCE,sat. It uses an Al2O3 substrate with low thermal resistance and PressFIT contact technology. This device offers rugged mounting due to integrated mounting clamp.
Best cost-performance ratio with reduced system costs
High degree of freedom in design, and uses IGBT HighSpeed 3 technology
Highest efficiency and power density