Infineon IGW75N65H5XKSA1, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 5 units)*

$39.35

(exc. GST)

$43.30

(inc. GST)

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Per Pack*
5 - 5$7.87$39.35
10 - 10$7.67$38.35
15 +$7.556$37.78

*price indicative

Packaging Options:
RS Stock No.:
218-4392
Mfr. Part No.:
IGW75N65H5XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

75A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

198W

Number of Transistors

1

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Height

5.21mm

Length

21.1mm

Width

16.13 mm

Series

IGW75N65H5

Standards/Approvals

JEDEC, RoHS

Automotive Standard

No

The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 120 A.

Higher power density design

50V increase in the bus voltage possible without compromising reliability

Mild positive temperature coefficient

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