STMicroelectronics STGF30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-220FP
- RS Stock No.:
- 204-9874
- Mfr. Part No.:
- STGF30H65DFB2
- Brand:
- STMicroelectronics
Available for back order.
Added
Price (ex. GST) Each (In a Pack of 5)
$5.806
(exc. GST)
$6.387
(inc. GST)
| Units | Per unit | Per Pack* |
| 5 - 10 | $5.806 | $29.03 |
| 15 - 20 | $5.658 | $28.29 |
| 25 + | $5.568 | $27.84 |
| *price indicative | ||
- RS Stock No.:
- 204-9874
- Mfr. Part No.:
- STGF30H65DFB2
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 50 W |
| Package Type | TO-220FP |
| Pin Count | 3 |
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