ON Semiconductor, FGAF40S65AQ

Technical data sheets
Legislation and Compliance
Non Compliant
COO (Country of Origin): KR
Product Details

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.

Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application

Specifications
Attribute Value
Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 94 W
Number of Transistors 1
Package Type TO-3PF
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.7mm
Width 5.7mm
Height 24.7mm
Dimensions 15.7 x 5.7 x 24.7mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
Energy Rating 325µJ
Gate Capacitance 2590pF
Stock check temporarily unavailable - call for stock availability
Price (ex. GST) Each (In a Pack of 3)
$ 4.36
(exc. GST)
$ 4.80
(inc. GST)
units
Per unit
Per Pack*
3 - 27
$4.36
$13.08
30 - 297
$3.897
$11.691
300 - 747
$3.543
$10.629
750 - 1497
$3.423
$10.269
1500 +
$3.347
$10.041
*price indicative
Packaging Options:
Related Products
Discrete IGBTs, Fairchild Semiconductor The Insulated Gate Bipolar ...
Description:
Discrete IGBTs, Fairchild Semiconductor The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability ...
Discrete IGBTs, Fairchild Semiconductor The Insulated Gate Bipolar ...
Description:
Discrete IGBTs, Fairchild Semiconductor The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability ...
Using novel field stop IGBT technology, Fairchild’s new ...
Description:
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential Maximum Junction Temperature: ...
This Insulated Gate Bipolar Transistor (IGBT) features a ...
Description:
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop IV Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss In addition, this new device ...