Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Maximum Continuous Collector Current	150 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	455 W
	Package Type	TO-247
	Mounting Type	Through Hole
	Channel Type	P
	Pin Count	4
	Switching Speed	1MHz
	Transistor Configuration	Single
	Dimensions	15.8 x 5.2 x 22.74mm
	Energy Rating	160mJ
	Maximum Operating Temperature	+175 °C
	Gate Capacitance	3710pF
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Maximum Continuous Collector Current 150 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 455 W
	Package Type TO-247
	Mounting Type Through Hole
	Channel Type P
	Pin Count 4
	Switching Speed 1MHz
	Transistor Configuration Single
	Dimensions 15.8 x 5.2 x 22.74mm
	Energy Rating 160mJ
	Maximum Operating Temperature +175 °C
	Gate Capacitance 3710pF
	Minimum Operating Temperature -55 °C

Datasheet

COO (Country of Origin):: CN

Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution

onsemi FGH75T65SHDTLN4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole