ON Semiconductor FGH75T65SHDTL4 P-Channel IGBT, 150 A 650 V, 4-Pin TO-247

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Maximum Junction Temperature: TJ =175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE (sat) =1.6 V (Typ.) @ IC = 75 A
100% of the Parts Tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution

Specifications
Attribute Value
Maximum Continuous Collector Current 150 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±20V
Number of Transistors 1
Maximum Power Dissipation 455 W
Package Type TO-247
Mounting Type Through Hole
Channel Type P
Pin Count 4
Switching Speed 1MHz
Transistor Configuration Single
Dimensions 15.8 x 5.2 x 22.74mm
Gate Capacitance 3710pF
Energy Rating 160µJ
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
On back order for despatch 21/12/2020, delivery within 7 working days from despatch date.
Price (ex. GST) Each (In a Tube of 450)
$ 7.56
(exc. GST)
$ 8.32
(inc. GST)
units
Per unit
Per Tube*
450 - 450
$7.56
$3,402.00
900 +
$7.176
$3,229.20
*price indicative
Related Products
Infineon Trench Stop IGBT Transistors, 600 and 650V ...
Description:
Infineon Trench Stop IGBT Transistors, 600 and 650V A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring Trench Stop™ technology The range includes devices with an integrated high speed, fast recovery anti-parallel diode. ...
Responding to the market requirement to accommodate ever ...
Description:
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as ...
Discrete IGBTs, Fairchild Semiconductor The Insulated Gate Bipolar ...
Description:
Discrete IGBTs, Fairchild Semiconductor The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability ...
Discrete IGBTs, Fairchild Semiconductor The Insulated Gate Bipolar ...
Description:
Discrete IGBTs, Fairchild Semiconductor The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability ...