onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole

RS Stock No.:: 166-2181
Mfr. Part No.:: FGA60N65SMD
Brand:: onsemi

onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole

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Added

Price (ex. GST) Each (In a Tube of 30)

$7.091

(exc. GST)

$7.80

(inc. GST)

Units	Per unit	Per Tube*
30 - 30	$7.091	$212.73
60 - 90	$6.914	$207.42
120 +	$6.807	$204.21
*price indicative

RS Stock No.:: 166-2181
Mfr. Part No.:: FGA60N65SMD
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Discrete IGBTs, Fairchild Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	120 A
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	600 W
Package Type	TO-3PN
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	15.8 x 5 x 20.1mm
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+175 °C