STMicroelectronics STGWT15H60F IGBT, 30 A @ +25°C 600 V, 3-Pin TO, Through Hole
- RS Stock No.:
- 165-3233
- Mfr. Part No.:
- STGWT15H60F
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
$70.41
(exc. GST)
$77.46
(inc. GST)
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | $2.347 | $70.41 |
| 90 - 270 | $2.277 | $68.31 |
| 300 - 570 | $2.208 | $66.24 |
| 600 - 2970 | $2.142 | $64.26 |
| 3000 + | $2.078 | $62.34 |
*price indicative
- RS Stock No.:
- 165-3233
- Mfr. Part No.:
- STGWT15H60F
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 30 A @ +25°C | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 115 W | |
| Number of Transistors | 1 | |
| Package Type | TO | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.8 x 5 x 20.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 553mJ | |
| Gate Capacitance | 1952pF | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 30 A @ +25°C | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 115 W | ||
Number of Transistors 1 | ||
Package Type TO | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.8 x 5 x 20.1mm | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 553mJ | ||
Gate Capacitance 1952pF | ||
Minimum Operating Temperature -55 °C | ||
Based on trench field-stop (TFS) technology, the 600 V IGBT H series features a very low saturation voltage (down to 1.5 V) with minimal collector current turn-off tail and a maximum operating junction temperature of 175 °C, enhancing the efficiency of medium-frequency home appliance applications. Tight control cover parameters combined with a VCE(sat) showing a positive temperature coefficient enables safe paralleling of multiple IGBTs for higher power requirements and design simplification.
Medium-speed IGBT series optimized for home appliance applications (8 to 30 kHz)
High robustness and reliability thanks to an extended max operating TJ of 175 °C and 600 V breakdown voltage
Very low saturation voltage (down to 1.5 V) for increased efficiency
Positive temperature coefficient for safe paralleling of multiple IGBTs
Optimized diode for target applications (low EMI and fast recovery time)
High robustness and reliability thanks to an extended max operating TJ of 175 °C and 600 V breakdown voltage
Very low saturation voltage (down to 1.5 V) for increased efficiency
Positive temperature coefficient for safe paralleling of multiple IGBTs
Optimized diode for target applications (low EMI and fast recovery time)
High speed switching
Tight parameter distribution
Safe paralleling
Low thermal resistance
Tight parameter distribution
Safe paralleling
Low thermal resistance