Infineon IGW40N65F5FKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 110-7425
- Mfr. Part No.:
- IGW40N65F5FKSA1
- Brand:
- Infineon
40 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Pack of 4)
$6.18
(exc. GST)
$6.80
(inc. GST)
| Units | Per unit | Per Pack* |
| 4 - 4 | $6.18 | $24.72 |
| 8 - 12 | $6.025 | $24.10 |
| 16 + | $5.933 | $23.732 |
| *price indicative | ||
- RS Stock No.:
- 110-7425
- Mfr. Part No.:
- IGW40N65F5FKSA1
- Brand:
- Infineon
Legislation and Compliance
Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 250 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 16.13 x 5.21 x 21.1mm |
| Energy Rating | 0.46mJ |
| Maximum Operating Temperature | +175 °C |
| Gate Capacitance | 2500pF |
| Minimum Operating Temperature | -40 °C |
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