Semikron SKM400GB126D, SEMITRANS3 Dual Half Bridge IGBT Module, 470 A max, 1200 V, Panel Mount

  • RS Stock No. 468-2527
  • Mfr. Part No. SKM400GB126D
  • Manufacturer Semikron
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

//media.rs-online.com/t_line/L330056-06.gif

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration Series
Configuration Dual Half Bridge
Maximum Continuous Collector Current 470 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type SEMITRANS3
Pin Count 7
Dimensions 106.4 x 61.4 x 30.5mm
Height 30.5mm
Length 106.4mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
Width 61.4mm
6 : Next working day (AU stock)
2 : 7 working days (Global stock)
Price (ex. GST) Each
$ 422.81
(exc. GST)
$ 465.09
(inc. GST)
units
Per unit
1 - 1
$422.81
2 - 4
$371.59
5 - 9
$338.76
10 - 19
$316.37
20 +
$296.24
Related Products
IGBT Modules, IXYS The Insulated Gate Bipolar Transistor ...
Description:
IGBT Modules, IXYS The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of ...
IGBT Modules, IXYS The Insulated Gate Bipolar Transistor ...
Description:
IGBT Modules, IXYS The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of ...
IGBT Modules, Infineon The Infineon range of IGBT ...
Description:
IGBT Modules, Infineon The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK ...
IGBT Modules, Infineon The Infineon range of IGBT ...
Description:
IGBT Modules, Infineon The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK ...