Semikron SKM300GB125D, SEMITRANS3 Dual Half Bridge IGBT Module, 300 A max, 1200 V, Panel Mount

  • RS Stock No. 468-2498
  • Mfr. Part No. SKM300GB125D
  • Manufacturer Semikron
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): DE
Product Details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

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IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration Dual Half Bridge
Transistor Configuration Series
Maximum Continuous Collector Current 300 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type SEMITRANS3
Pin Count 7
Dimensions 106.4 x 61.4 x 30.5mm
Height 30.5mm
Length 106.4mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
Width 61.4mm
46 In stock for delivery within 5 working day(s)
Price (ex. GST) Each
$ 366.56
(exc. GST)
$ 403.22
(inc. GST)
units
Per unit
1 - 9
$366.56
10 - 49
$357.45
50 - 99
$348.57
100 - 249
$339.87
250 +
$331.52
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The Insulated Gate Bipolar Transistor or IGBT is ...
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