Semikron SKM200GB125D Dual Half Bridge IGBT Module, 200 A 1200 V, 3-Pin SEMITRANS3, Panel Mount

RS Stock No.:: 468-2454
Mfr. Part No.:: SKM200GB125D
Brand:: Semikron

Semikron SKM200GB125D Dual Half Bridge IGBT Module, 200 A 1200 V, 3-Pin SEMITRANS3, Panel Mount

3 In Global stock for delivery within 5 working day(s)

7 In Global stock for delivery within 10 working day(s)

Added

Price (ex. GST) Each

$486.56

(exc. GST)

$535.22

(inc. GST)

Units	Per unit
1 - 9	$486.56
10 - 49	$479.76
50 - 99	$470.02
100 - 249	$460.62
250 +	$451.39

RS Stock No.:: 468-2454
Mfr. Part No.:: SKM200GB125D
Brand:: Semikron

Technical data sheets

Legislation and Compliance

Product Details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	200 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Configuration	Dual Half Bridge
Package Type	SEMITRANS3
Mounting Type	Panel Mount
Channel Type	N
Pin Count	3
Transistor Configuration	Series
Dimensions	106.4 x 61.4 x 30.5mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-40 °C