IXYS MID200-12A4, Y3 DCB IGBT Module, 270 A max, 1200 V, Panel Mount

  • RS Stock No. 146-1696
  • Mfr. Part No. MID200-12A4
  • Manufacturer IXYS
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration Single
Transistor Configuration Single
Maximum Continuous Collector Current 270 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type Y3 DCB
Pin Count 5
Dimensions 110 x 62 x 30mm
Height 30mm
Length 110mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
Width 62mm
4 In stock for delivery within 5 working day(s) (Global Stock)
Price (ex. GST) Each (In a Box of 2)
$ 129.49
(exc. GST)
$ 142.44
(inc. GST)
units
Per unit
Per Box*
2 +
$129.49
$258.98
*price indicative
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Description:
IGBT Modules, IXYS The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of ...