Cypress Semiconductor NOR 2Gbit CFI Flash Memory 64-Pin BGA, S70GL02GS12FHIV10
- RS Stock No.:
- 215-5807
- Mfr. Part No.:
- S70GL02GS12FHIV10
- Brand:
- Cypress Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 215-5807
- Mfr. Part No.:
- S70GL02GS12FHIV10
- Brand:
- Cypress Semiconductor
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Cypress Semiconductor | |
| Memory Size | 2Gbit | |
| Interface Type | CFI | |
| Package Type | BGA | |
| Pin Count | 64 | |
| Organisation | 128 M x 16 | |
| Cell Type | NOR | |
| Select all | ||
|---|---|---|
Brand Cypress Semiconductor | ||
Memory Size 2Gbit | ||
Interface Type CFI | ||
Package Type BGA | ||
Pin Count 64 | ||
Organisation 128 M x 16 | ||
Cell Type NOR | ||
The Cypress Semiconductor S70GL02GS 2-Gigabit MirrorBit Flash memory device is fabricated on 65 nm MirrorBit Eclipse process technology. This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance and lower power consumption.
CMOS 3.0 Volt Core with Versatile I/O™
Two 1024 Megabit (S29GL01GS) in a single 64-ball
Fortified-BGA package (see S29GL01GS datasheet for full specifications)
65 nm MirrorBit Eclipse™ process technology
Single supply (VCC) for read / program / erase (2.7
Two 1024 Megabit (S29GL01GS) in a single 64-ball
Fortified-BGA package (see S29GL01GS datasheet for full specifications)
65 nm MirrorBit Eclipse™ process technology
Single supply (VCC) for read / program / erase (2.7