ON Semiconductor, FJPF2145TU, Emmitter Switched

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): KR
Product Details

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 5 A
Maximum Collector Source Voltage 0.209V
Maximum Power Dissipation 40 W
Minimum DC Current Gain 8
Mounting Type Through Hole
Package Type TO-220F
Pin Count 3
Maximum Base Source Voltage ±20V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Base Current 1.5A
Category Power Transistor
Dimensions 10.36 x 4.9 x 16.07mm
Height 16.07mm
Minimum Operating Temperature -55 °C
Width 4.9mm
Length 10.36mm
Maximum Operating Temperature +125 °C
450 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Tube of 50)
$ 0.73
(exc. GST)
$ 0.80
(inc. GST)
units
Per unit
Per Tube*
50 +
$0.73
$36.50
*price indicative
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Description:
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller ...