onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

RS Stock No.:: 790-5315
Mfr. Part No.:: MJD112-1G
Brand:: onsemi

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

This image is representative of the product range

Bulk discount available

Price (ex. GST) Each (In a Pack of 15)

$1.30

(exc. GST)

$1.43

(inc. GST)

105 In Global stock for delivery within 10 working day(s)*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
15 - 15	$1.30	$19.50
30 - 30	$1.279	$19.185
45 +	$1.247	$18.705

**price indicative

RS Stock No.:: 790-5315
Mfr. Part No.:: MJD112-1G
Brand:: onsemi

Datasheet - MJD112-1G
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	2 A
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	1000
Maximum Base Emitter Saturation Voltage	4 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	3 V
Maximum Collector Cut-off Current	20µA
Width	2.38mm
Height	6.35mm
Length	6.73mm
Maximum Operating Temperature	+150 °C
Dimensions	6.73 x 2.38 x 6.35mm
Minimum Operating Temperature	-65 °C
Maximum Power Dissipation	20 W

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

NPN Darlington Transistors, ON Semiconductor

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