onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

RS Stock No.:: 178-4811
Mfr. Part No.:: MJD112-1G
Brand:: onsemi

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

On back order for despatch 23/07/2024, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each (In a Tube of 75)

$0.831

(exc. GST)

$0.914

(inc. GST)

Units	Per unit	Per Tube*
75 - 75	$0.831	$62.325
150 - 225	$0.811	$60.825
300 +	$0.798	$59.85
*price indicative

RS Stock No.:: 178-4811
Mfr. Part No.:: MJD112-1G
Brand:: onsemi

Technical data sheets

Datasheet

Legislation and Compliance

Product Details

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MJD112 is the complementary Darlington power transistors designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

Straight lead version in plastic sleeves
These devices are Pb free and are RoHS compliant

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	2 A
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	1000
Maximum Base Emitter Saturation Voltage	4 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	3 V
Maximum Collector Cut-off Current	20µA
Maximum Operating Temperature	+150 °C
Length	6.73mm
Minimum Operating Temperature	-65 °C
Maximum Power Dissipation	20 W
Dimensions	6.73 x 2.38 x 6.35mm
Height	6.35mm
Width	2.38mm