N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-220AB Infineon AUIRF3205Z
- RS Stock No.:
- 912-8586
- Mfr. Part No.:
- AUIRF3205Z
- Brand:
- Infineon
500 In Global stock for delivery within 10 working day(s)
Added
Price (ex. GST) Each (In a Tube of 50)
$3.783
(exc. GST)
$4.161
(inc. GST)
| Units | Per unit | Per Tube* |
| 50 - 50 | $3.783 | $189.15 |
| 100 - 150 | $3.689 | $184.45 |
| 200 + | $3.632 | $181.60 |
| *price indicative | ||
- RS Stock No.:
- 912-8586
- Mfr. Part No.:
- AUIRF3205Z
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
Product Details
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 110 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | TO-220AB |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 6.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 170 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 10.67mm |
| Width | 4.83mm |
| Typical Gate Charge @ Vgs | 76 nC @ 10 V |
| Height | 16.51mm |
| Minimum Operating Temperature | -55 °C |
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