IRLMS5703TRPBF P-Channel MOSFET, 2.4 A, 30 V HEXFET, 6-Pin Micro6 Infineon

  • RS Stock No. 830-3335
  • Mfr. Part No. IRLMS5703TRPBF
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TH
Product Details

P-Channel Power MOSFET 30V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 2.4 A
Maximum Drain Source Voltage 30 V
Package Type Micro6
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 325 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 1.7 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Height 1.3mm
Length 3mm
Typical Gate Charge @ Vgs 7.2 nC @ 10 V
Width 1.75mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
Transistor Material Si
Series HEXFET
1900 In stock for delivery within 5 working day(s) (Global Stock)
Price (ex. GST) Each (In a Pack of 50)
$ 0.65
(exc. GST)
$ 0.71
(inc. GST)
units
Per unit
Per Pack*
50 - 50
$0.65
$32.50
100 - 200
$0.627
$31.35
250 - 450
$0.618
$30.90
500 - 950
$0.603
$30.15
1000 +
$0.558
$27.90
*price indicative
Packaging Options:
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