CSD87350Q5D Dual N-Channel MOSFET Module, 120 A, 30 V NexFET, 8-Pin SON Texas Instruments

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Power MOSFET Modules, Texas Instruments

Half-Bridge NexFET Power Block

MOSFET Transistors, Texas Instruments

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 120 A
Maximum Drain Source Voltage 30 V
Package Type SON
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 1.2 mΩ, 5 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.1V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 12 W
Transistor Configuration Series
Maximum Gate Source Voltage +8 V
Number of Elements per Chip 2
Maximum Operating Temperature +150 °C
Typical Gate Charge @ Vgs 8.4 nC @ 4.5 V, 20 nC @ 4.5 V
Transistor Material Si
Minimum Operating Temperature -55 °C
Length 6.1mm
Width 5.1mm
Height 1.5mm
Series NexFET
285 In stock for delivery within 5 working day(s) (Global Stock)
Price (ex. GST) Each (In a Pack of 5)
$ 3.75
(exc. GST)
$ 4.13
(inc. GST)
units
Per unit
Per Pack*
5 - 20
$3.75
$18.75
25 - 45
$3.18
$15.90
50 - 245
$3.116
$15.58
250 - 495
$2.54
$12.70
500 +
$2.22
$11.10
*price indicative
Due to temporarily constrained supply, RS is unable to accept backorders at this time
Packaging Options:
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Description:
Half-Bridge NexFET Power Block