Dual N-Channel MOSFET Module, 120 A, 30 V, 8-Pin SON Texas Instruments CSD87350Q5D

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Discontinued product

Technical data sheets

Half-Bridge NexFET Power Block

MOSFET Transistors, Texas Instruments

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	30 V
Package Type	SON
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	1.2 mΩ, 5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	12 W
Transistor Configuration	Series
Maximum Gate Source Voltage	+8 V
Typical Gate Charge @ Vgs	20 nC @ 4.5 V, 8.4 nC @ 4.5 V
Maximum Operating Temperature	+150 °C
Length	6.1mm
Number of Elements per Chip	2
Transistor Material	Si
Width	5.1mm
Series	NexFET
Minimum Operating Temperature	-55 °C
Height	1.5mm