Dual N/P-Channel-Channel MOSFET, 5.3 A, 6.6 A, 20 V, 8-Pin SOIC Infineon IRF7317TRPBF

RS Stock No.:: 826-8875P
Mfr. Part No.:: IRF7317TRPBF
Brand:: Infineon

Dual N/P-Channel-Channel MOSFET, 5.3 A, 6.6 A, 20 V, 8-Pin SOIC Infineon IRF7317TRPBF

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Discontinued product

RS Stock No.:: 826-8875P
Mfr. Part No.:: IRF7317TRPBF
Brand:: Infineon

IRF7317TRPBF HEXFET Power MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	5.3 A, 6.6 A
Maximum Drain Source Voltage	20 V
Series	HEXFET
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	46 mΩ, 98 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.7V
Minimum Gate Threshold Voltage	0.7V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	18 nC @ 4.5 V, 19 nC @ 4.5 V
Length	5mm
Transistor Material	Si
Width	4mm
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N/P-Channel-Channel MOSFET, 5.3 A, 6.6 A, 20 V, 8-Pin SOIC Infineon IRF7317TRPBF

Dual N/P-Channel Power MOSFET, Infineon