Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3

RS Stock No.:: 818-1302P
Mfr. Part No.:: SI4909DY-T1-GE3
Brand:: Vishay

Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3

This image is representative of the product range

5420 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip

$1.289

(exc. GST)

$1.418

(inc. GST)

Units	Per unit
640 - 1240	$1.289
1260 +	$1.269

RS Stock No.:: 818-1302P
Mfr. Part No.:: SI4909DY-T1-GE3
Brand:: Vishay

Si4909DY, Dual P-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	6.5 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	34 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3.2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Length	5mm
Typical Gate Charge @ Vgs	41.5 nC @ 10 V
Transistor Material	Si
Width	4mm
Minimum Operating Temperature	-55 °C
Height	1.55mm

Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3

Dual P-Channel MOSFET, Vishay Semiconductor