Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

RS Stock No.:: 787-9020P
Mfr. Part No.:: SI4532CDY-T1-GE3
Brand:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

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Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip

$0.897

(exc. GST)

$0.987

(inc. GST)

2260 In Global stock for delivery within 10 working day(s)*

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Units	Per unit
640 +	$0.875

RS Stock No.:: 787-9020P
Mfr. Part No.:: SI4532CDY-T1-GE3
Brand:: Vishay

Si4532CDY, N- and P-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.3 A, 6 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	65 mΩ, 140 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.78 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Length	5mm
Typical Gate Charge @ Vgs	6 nC @ 10 V, 7.8 nC @ 10 V
Width	4mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

FREE delivery for orders over $80.00 ex GST

Dual N/P-Channel MOSFET, Vishay Semiconductor